JPH0424877B2 - - Google Patents
Info
- Publication number
- JPH0424877B2 JPH0424877B2 JP57022363A JP2236382A JPH0424877B2 JP H0424877 B2 JPH0424877 B2 JP H0424877B2 JP 57022363 A JP57022363 A JP 57022363A JP 2236382 A JP2236382 A JP 2236382A JP H0424877 B2 JPH0424877 B2 JP H0424877B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- disposed
- impurity concentration
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
- H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57022363A JPS58139471A (ja) | 1982-02-15 | 1982-02-15 | Ｍｉｓ電界効果トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57022363A JPS58139471A (ja) | 1982-02-15 | 1982-02-15 | Ｍｉｓ電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58139471A JPS58139471A (ja) | 1983-08-18 |
| JPH0424877B2 true JPH0424877B2 (en]) | 1992-04-28 |
Family
ID=12080538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57022363A Granted JPS58139471A (ja) | 1982-02-15 | 1982-02-15 | Ｍｉｓ電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58139471A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5238857A (en) * | 1989-05-20 | 1993-08-24 | Fujitsu Limited | Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure |
| JP2782781B2 (ja) * | 1989-05-20 | 1998-08-06 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2007214495A (ja) * | 2006-02-13 | 2007-08-23 | Oki Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5928993B2 (ja) * | 1975-03-10 | 1984-07-17 | 日本電信電話株式会社 | 半導体装置とその製造方法 |
| JPS55130171A (en) * | 1979-03-29 | 1980-10-08 | Fujitsu Ltd | Mos field effect transistor |
-
1982
- 1982-02-15 JP JP57022363A patent/JPS58139471A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58139471A (ja) | 1983-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3364559B2 (ja) | 半導体装置 | |
| US3933529A (en) | Process for the production of a pair of complementary field effect transistors | |
| JPH0132660B2 (en]) | ||
| US4330850A (en) | MNOS Memory cell | |
| JPH08130308A (ja) | 半導体装置 | |
| JPS63102264A (ja) | 薄膜半導体装置 | |
| US4142197A (en) | Drain extensions for closed COS/MOS logic devices | |
| JPH11135795A (ja) | 電界効果型トランジスタ | |
| JPH0424877B2 (en]) | ||
| JPS6123669B2 (en]) | ||
| JPS6271274A (ja) | Ｍｏｓ形半導体装置 | |
| JP3143102B2 (ja) | Ｍｉｓ型トランジスタ | |
| JPS62274778A (ja) | 半導体装置 | |
| JPS5858747A (ja) | Ｍｏｓ型半導体集積回路 | |
| JPH04115538A (ja) | 半導体装置 | |
| JPS6024593B2 (ja) | 半導体装置 | |
| JPS626660B2 (en]) | ||
| JPH04313238A (ja) | 半導体素子 | |
| KR950003238B1 (ko) | 다중-전극을 이용한 논리소자의 구조 | |
| JP2676769B2 (ja) | 半導体装置 | |
| JPH0620134B2 (ja) | 半導体装置 | |
| JPH02105566A (ja) | 相補型半導体装置 | |
| JPH05136382A (ja) | 相補型ゲートアレイ | |
| JPH02102575A (ja) | 半導体装置 | |
| JPH05243261A (ja) | 絶縁ゲート電界効果トランジスタ |